型号:MCR03FZPEFX1211 | 类别:芯片电阻 - 表面安装 | 制造商:Rohm Semiconductor |
封装:0603(1608 公制) | 描述:RES 1.21K OHM 1/10W 1% 0603 |
详细参数
类别 | 芯片电阻 - 表面安装 |
---|---|
描述 | RES 1.21K OHM 1/10W 1% 0603 |
系列 | MCR03 |
制造商 | Rohm Semiconductor |
电阻(Ω) | 1.21k |
功率(W) | 0.1W,1/10W |
成分 | 厚膜 |
特性 | - |
温度系数 | ±100ppm/°C |
容差 | ±1% |
封装/外壳 | 0603(1608 公制) |
供应商器件封装 | 0603(1608 Metric) |
大小/尺寸 | 0.063" L x 0.031" W(1.60mm x 0.80mm) |
高度 | 0.022"(0.55mm) |
端子数 | 2 |
包装 | 带卷 (TR) |
供应商
MCR03FZPEFX1211相关型号
- HF659/64SF
扁平带
3M
CABLE 64COND RND SHIELD GRY 50’
- MX2-AB015-VP
配件
Omron Electronics Inc-IA Div
48-TFBGA,CSPBGA
MX2 230V 1PH VALUE PACK
- MVE6.3VE472ML22TR
电容器
United Chemi-Con
径向,Can - SMD
CAP ALUM 4700UF 6.3V 20% SMD
- MCR18EZHF2700
芯片电阻 - 表面安装
Rohm Semiconductor
1206(3216 公制)
RES 270 OHM 1/4W 1% 1206 SMD
- MT36VDDF12872G-40BG3
存储器 - 模块
Micron Technology Inc
184-DIMM
MODULE SDRAM DDR 1GB 184DIMM
- MCR03EZPJ822
芯片电阻 - 表面安装
Rohm Semiconductor
0603(1608 公制)
RES 8.2K OHM 1/10W 5% 0603 SMD
- MT8VDDT6464AY-335DB
存储器 - 模块
Micron Technology Inc
184-DIMM
MODULE SDRAM DDR 512MB 184DIMM
- HF696
信号,高达 2 A
TE Connectivity
RELAY RF SPDT 2A 12V
- MX34007NF1
矩形- 接头,公引脚
JAE Electronics
48-TFBGA,CSPBGA
CONN HEADER 2.2MM 7POS R/A
- MVE63VC221MK14TR
电容器
United Chemi-Con
径向,Can - SMD
CAP ALUM 220UF 63V 20% SMD
- MCR18EZHF2703
芯片电阻 - 表面安装
Rohm Semiconductor
1206(3216 公制)
RES 270K OHM 1/4W 1% 1206 SMD
- ONET4211LDRGET
PMIC - 激光驱动器
Texas Instruments
24-VFQFN 裸露焊盘
IC LSR DRVR 4.25GBPS 3.6V 24VQFN
- MT36VDDF25672G-40BD2
存储器 - 模块
Micron Technology Inc
184-DIMM
MODULE DDR SDRAM 2GB 184-DIMM
- MCR03EZPJ913
芯片电阻 - 表面安装
Rohm Semiconductor
0603(1608 公制)
RES 91K OHM 1/10W 5% 0603 SMD
- MT8VDDT6464AY-335F3
存储器 - 模块
Micron Technology Inc
184-DIMM
MODULE DDR SDRAM 512MB 184-DIMM
- MCR18EZHF2703
芯片电阻 - 表面安装
Rohm Semiconductor
1206(3216 公制)
RES 270K OHM 1/4W 1% 1206 SMD
- HF70ACB322513-T
铁氧体磁珠和芯片
TDK Corporation
1210(3225 公制)
FERRITE CHIP 52 OHM 400MA 1210
- MX34012SF1
矩形 - 外壳
JAE Electronics
48-TFBGA,CSPBGA
CONN SOCKET 12POS HOUSING 2.2MM
- MVE63VC2R2MD55TP
电容器
United Chemi-Con
径向,Can - SMD
CAP ALUM 2.2UF 63V 20% SMD
- ONET4291PARGVR
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Texas Instruments
16-VQFN 裸露焊盘
IC OPAMP LIMIT DIFF 4.5GHZ 16QFN
- MT36VDDF25672Y-40BD2
存储器 - 模块
Micron Technology Inc
184-DIMM
MODULE SDRAM DDR 2GB 184DIMM
- MT8VDDT6464AY-40BF3
存储器 - 模块
Micron Technology Inc
184-DIMM
MODULE DDR SDRAM 512MB 184-DIMM
- MCR18EZHF2802
芯片电阻 - 表面安装
Rohm Semiconductor
1206(3216 公制)
RES 28.0K OHM 1/4W 1% 1206 SMD
- MX34024NF1
矩形- 接头,公引脚
JAE Electronics
48-TFBGA,CSPBGA
CONN HEADER PIN 24POS R/A TIN
- MVE63VC33RMH10TP
电容器
United Chemi-Con
径向,Can - SMD
CAP ALUM 33UF 63V 20% SMD
- ONET8501PBRGTT
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Texas Instruments
16-VFQFN 裸露焊盘
IC OPAMP LIMITING 9GHZ SGL 16QFN
- HF70ACC201209-T
铁氧体磁珠和芯片
TDK Corporation
0805(2012 公制)
FERRITE CHIP 10 OHM 1.5A 0805
- MCR03FZPEFX4021
芯片电阻 - 表面安装
Rohm Semiconductor
0603(1608 公制)
RES 4.02K OHM 1/10W 1% 0603
- MT38AF518RSMM-001
RF配件
Laird Technologies IAS
TO-5-2 透镜顶部金属罐
ACCY MOUNT BMM 3/8 A195 RSMAM
- MCR18EZHF2803
芯片电阻 - 表面安装
Rohm Semiconductor
1206(3216 公制)
RES 280K OHM 1/4W 1% 1206 SMD
- ONET8501VRGPRG4
PMIC - 激光驱动器
Texas Instruments
20-VFQFN 裸露焊盘
IC LASR DRVR 11.3GBPS 3.6V 20QFN
- MVE63VE471ML22TR
电容器
United Chemi-Con
径向,Can - SMD
CAP ALUM 470UF 63V 20% SMD
- MX34036SF1
矩形 - 外壳
JAE Electronics
48-TFBGA,CSPBGA
CONN SOCKET 36POS HOUSING 2.2MM
- HF70ACC321611-T
铁氧体磁珠和芯片
TDK Corporation
1206(3216 公制)
FERRITE CHIP 26 OHM 1.5A 1206
- MT8VDDT6464HY-40BF2
存储器 - 模块
Micron Technology Inc
200-SODIMM
MODULE DDR SDRAM 512MB 200SODIMM
- MT41J128M16HA-125G:D TR
存储器
Micron Technology Inc
96-TFBGA
IC DDR3 SDRAM 2GBIT 96FBGA
- MCR03FZPEJ152
芯片电阻 - 表面安装
Rohm Semiconductor
0603(1608 公制)
RES 1.5K OHM 1/10W 5% 0603
- MCR18EZHF2803
芯片电阻 - 表面安装
Rohm Semiconductor
1206(3216 公制)
RES 280K OHM 1/4W 1% 1206 SMD
- MVG24-110/32DFX-BOTTLE
端子 - 快速连接,快速断连
3M
径向,Can - SMD
CONN FEMALE DISCONN INSUL 100PC
- ONET8501VRGPT
PMIC - 激光驱动器
Texas Instruments
20-VFQFN 裸露焊盘
IC LASR DRVR 11.3GBPS 3.6V 20QFN